Samsung IRF610

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Manufacturer Part Number

IRF610

Package Shape

RECTANGULAR

Manufacturer

Rochester Electronics LLC

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Risk Rank

5.03

Drain Current-Max (ID)

3.3 A

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

unknown

JESD-30代码

R-PSFM-T3

资历状况

COMMERCIAL

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-220AB

漏极-源极导通最大电阻

1.5 Ω

脉冲漏极电流-最大值(IDM)

8 A

DS 击穿电压-最小值

200 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR