Samsung Semiconductor K9F1208U0M-YIB0000

EU RoHS

不合规

ECCN (US)

3A991.b.1.a

Automotive

无

PPAP

无

Cell Type

SLC NAND

Chip Density (bit)

512M

Block Organization

Symmetrical

Address Bus Width (bit)

8

Number of Bits/Word (bit)

8

Number of Words

64M

Programmability

有

Timing Type

Asynchronous

Max. Access Time (ns)

12000

Maximum Erase Time (S)

0.003/Block

Maximum Page Access Time (ns)

50(Min)

Maximum Programming Time (ms)

0.5/Page

Interface Type

Parallel

Minimum Operating Supply Voltage (V)

2.7

Typical Operating Supply Voltage (V)

3.3|3

Maximum Operating Supply Voltage (V)

3.6

Operating Current (mA)

30

Program Current (mA)

30

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

85

Supplier Temperature Grade

Industrial

Command Compatible

无

ECC Support

有

Support of Page Mode

有

包装

Tray

零件状态

Obsolete

建筑学

Sectored

行业规模

16Kbyte x 4096

页面尺寸

512byte

引导模块

无