Samsung Semiconductor K9F1G08U0C-PIB000

EU RoHS

Compliant

ECCN (US)

3A991.b.1.a

Automotive

无

PPAP

无

Cell Type

NAND

Chip Density (bit)

1G

Block Organization

Symmetrical

Address Bus Width (bit)

28

Number of Bits/Word (bit)

8

Number of Words

128M

Programmability

有

Timing Type

Asynchronous

Maximum Erase Time (S)

0.01/Block

Maximum Programming Time (ms)

0.7

Interface Type

Parallel

Minimum Operating Supply Voltage (V)

2.7

Typical Operating Supply Voltage (V)

3.3

Maximum Operating Supply Voltage (V)

3.6

Operating Current (mA)

30

Page Read Current (mA)

30

Program Current (mA)

30

Minimum Operating Temperature (°C)

-40

Maximum Operating Temperature (°C)

125

Command Compatible

无

ECC Support

有

Support of Page Mode

有

零件状态

Obsolete

建筑学

Sectored

行业规模

128Kbyte x 1024

页面尺寸

2Kbyte

引导模块

无