MH113-MH1RP-01BR1-0165详情
Samtec MH113-MH1RP-01BR1-0165重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-23-3
Pd - Power Dissipation
225 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Unit Weight
0.000282 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Forward Transconductance - Min
0.0035 S to 0.007 S
Manufacturer
onsemi
Brand
onsemi / Fairchild
Maximum Drain Gate Voltage
25 V
RoHS
Details
Vgs - Gate-Source Breakdown Voltage
- 25 V
Gate-Source Cutoff Voltage
- 4 V
Id - Continuous Drain Current
10 mA
系列
MMBF5485
包装
Reel
类型
JFET
子类别
Transistors
技术
Si
配置
Single
产品类别
JFETs
工作温度范围
- 55 C to + 150 C
产品类别
JFET
MH113-MH1RP-01BR1-0165拓展信息
Samtec
Samtec
Samtec
Samtec
Samtec
Samtec
Samtec
Samtec
Samtec
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