Schneider CR1F185L7

包装/外壳

Case244-04

Emitter- Base Voltage VEBO

4 V

Pd - Power Dissipation

30 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

10

Minimum Operating Temperature

- 65 C

Mounting Styles

通孔

Manufacturer

Advanced Semiconductor, Inc.

Brand

Advanced Semiconductor, Inc.

RoHS

Details

Collector- Emitter Voltage VCEO Max

33 V

包装

Tray

类型

射频双极功率

子类别

Transistors

技术

Si

工作频率

400 MHz

产品类别

射频双极晶体管

晶体管类型

双极电源

连续集电极电流

2 A

产品类别

射频双极晶体管