Schneider EMB12N03H

表面安装

YES

终端数量

5

晶体管元件材料

SILICON

Drain Current-Max (ID)

25 A

Ihs Manufacturer

EXCELLIANCE MOS CORP

Manufacturer

Excelliance MOS Corporation

Manufacturer Part Number

EMB12N03H

Number of Elements

1

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Description

SMALL OUTLINE, R-PDSO-F5

Package Shape

RECTANGULAR

Package Style

小概要

Part Life Cycle Code

接触制造商

Risk Rank

5.72

端子位置

DUAL

终端形式

FLAT

Reach合规守则

unknown

JESD-30代码

R-PDSO-F5

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

箱体转运

DRAIN

极性/通道类型

N-CHANNEL

漏极-源极导通最大电阻

0.0115 Ω

脉冲漏极电流-最大值(IDM)

100 A

DS 击穿电压-最小值

30 V

雪崩能量等级（Eas）

45 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR