Semelab 2N2219A

包装/外壳

TO-39-3

底架

通孔

引脚数

3

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

800 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

100 at 150 mA, 10 V

Collector-Emitter Saturation Voltage

1 V

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Gain Bandwidth Product fT

300 MHz

Manufacturer

TT Electronics

Brand

Semelab / TT Electronics

DC Current Gain hFE Max

300 at 150 mA, 10 V

Collector- Emitter Voltage VCEO Max

40 V

Number of Elements

1

RoHS

Compliant

子类别

Transistors

技术

Si

频率

250 MHz

极性

NPN

配置

Single

功率耗散

800 mW

产品类别

BJTs - Bipolar Transistors

集电极发射器电压(VCEO)

40 V

集电极基极电压(VCBO)

75 V

连续集电极电流

800 mA

产品类别

Bipolar Transistors - BJT