2N2907A详情
Seme LAB 2N2907A重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-18-3
Brand
Semelab / TT Electronics
Collector- Emitter Voltage VCEO Max
60 V
Collector-Emitter Saturation Voltage
1.6 V
DC Collector/Base Gain hfe Min
100 at 150 mA, 10 V
DC Current Gain hFE Max
300 at 150 mA, 10 V
Emitter- Base Voltage VEBO
5 V
Factory Pack QuantityFactory Pack Quantity
30
Gain Bandwidth Product fT
200 MHz
Manufacturer
TT Electronics
Maximum DC Collector Current
600 mA
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Styles
通孔
Pd - Power Dissipation
400 mW
Transistor Polarity
PNP
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
60 V
连续集电极电流
600 mA
产品类别
Bipolar Transistors - BJT
高度
5.33 mm
长度
5.84 mm
宽度
5.84 mm
2N2907A拓展信息
Seme LAB
Semelab
Semelab
Semelab
Semelab
Semelab
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