Shandong Jingdao Microelectronics S8050-H
- 收藏
- 对比
S8050-H
1604-S8050-H
晶体管 - 双极性晶体管(BJT)- 单个
--
大陆
立即发货

25V 300mW 350@50mA,1V 500mA NPN SOT-23 Bipolar (BJT) ROHS
1最小包装量--
S8050-H详情
Shandong Jingdao Microelectronics S8050-H重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Collector-Emitter Breakdown Voltage (Vceo)
25V
Power Dissipation (Pd)
300mW
DC Current Gain (hFE@Ic,Vce)
350@50mA,1V
Collector Current (Ic)
500mA
Transition Frequency (fT)
150MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)
600mV@500mA,50mA
Package
Tape & Reel (TR)
操作温度
-55℃~+150℃@(Tj)
晶体管类型
NPN
S8050-H拓展信息
Micro Electronics Corporation
Tianma Micro-electronics Co
Micro Electronics Corporation
Micro Electronics Corporation
Micro Electronics Corporation
Micro Electronics Corporation
Micro Electronics Corporation
Micro Electronics Corporation
Micro Electronics Corporation
Micro Electronics Ltd








哦! 它是空的。