Siemens CJD02N60

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Material front ring

Plastic

Type of electric connection

Screw connection

Number of contacts as change-over contact

0

Number of contacts as normally open contact

0

Construction type lens

Round

Degree of protection (IP)

IP67/IP69K

Degree of protection (NEMA)

4X, 13

Number of contacts as normally closed contact

1

Colour front ring

Titanium

With front ring

有

Package Description

IN-LINE, R-PSIP-T3

Package Style

IN-LINE

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Max

150 °C

Manufacturer Part Number

CJD02N60

Package Shape

RECTANGULAR

Manufacturer

Jiangsu Changjiang Electronics Technology Co Ltd

Number of Elements

1

Part Life Cycle Code

接触制造商

Ihs Manufacturer

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO LTD

Risk Rank

5.76

Drain Current-Max (ID)

2 A

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

unknown

JESD-30代码

R-PSIP-T3

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-251

最大漏极电流 (Abs) (ID)

2 A

漏极-源极导通最大电阻

4.4 Ω

脉冲漏极电流-最大值(IDM)

4 A

DS 击穿电压-最小值

600 V

雪崩能量等级（Eas）

20 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

1.25 W

反馈上限-最大值 (Crss)

9.2 pF

环境耗散-最大值

1.25 W