US2:37DUDP4EFP详情
Siemens US2:37DUDP4EFP重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-92-3 Kinked Lead
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
625 mW
Transistor Polarity
PNP
Maximum Operating Temperature
+ 150 C
Collector-Emitter Saturation Voltage
700 mV
Unit Weight
0.008466 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2000
Mounting Styles
通孔
Gain Bandwidth Product fT
100 MHz
Part # Aliases
BC32740TA_NL
Manufacturer
onsemi
Brand
onsemi / Fairchild
Maximum DC Collector Current
800 mA
DC Current Gain hFE Max
630
RoHS
Details
Collector- Emitter Voltage VCEO Max
45 V
系列
BC327
包装
弹药包
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
-
连续集电极电流
- 0.8 A
产品类别
Bipolar Transistors - BJT
宽度
3.93 mm
高度
4.7 mm
长度
4.7 mm
US2:37DUDP4EFP拓展信息








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