SMC Corporation CHAL40-900

包装/外壳

TO-18-3

Vds - Drain-Source Breakdown Voltage

40 V

Pd - Power Dissipation

0.36 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

1

Drain-Source Current at Vgs=0

15 mA

Mounting Styles

通孔

Manufacturer

Microchip

Brand

微芯片技术

Rds On - Drain-Source Resistance

50 Ohms

Maximum Drain Gate Voltage

40 V

RoHS

N

Vgs - Gate-Source Breakdown Voltage

- 40 V

Id - Continuous Drain Current

- 0.1 nA

包装

Bulk

类型

JFET

子类别

Transistors

技术

Si

配置

Single

产品类别

JFETs

产品类别

JFET