STMicroelectronics JANSR2N5551UBG
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JANSR2N5551UBG
2381-JANSR2N5551UBG
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Hi-Rel NPN bipolar transistor 160 V, 0.5 A
1最小包装量--
JANSR2N5551UBG详情
STMicroelectronics JANSR2N5551UBG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
30 Weeks
表面安装
YES
终端数量
3
晶体管元件材料
SILICON
Transistor Polarity
NPN
Package Description
SMALL OUTLINE, R-PDSO-N3
Package Style
小概要
Package Body Material
PLASTIC/EPOXY
Manufacturer Part Number
JANSR2N5551UBG
Package Shape
RECTANGULAR
Manufacturer
STMicroelectronics
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
STMICROELECTRONICS
Risk Rank
5.65
ECCN 代码
EAR99
端子位置
DUAL
终端形式
无铅
Reach合规守则
compliant
参考标准
MIL-19500; RH - 100K Rad(Si)
JESD-30代码
R-PDSO-N3
资历状况
不合格
Brand Name
STMicroelectronics
配置
SINGLE
功率耗散
360
极性/通道类型
NPN
集电极电流-最大值(IC)
0.5 A
最小直流增益(hFE)
30
连续集电极电流
500
集电极-发射器电压-最大值
160 V
JANSR2N5551UBG拓展信息
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