STMicroelectronics STB30N65M2AG

包装/外壳

D2PAK-3

安装类型

表面贴装

供应商器件包装

D²PAK (TO-263)

Continuous Drain Current Id

20

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

15 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

190 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.048678 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

STMicroelectronics

Brand

STMicroelectronics

Qg - Gate Charge

30.8 nC

Tradename

MDmesh

Rds On - Drain-Source Resistance

180 mOhms

RoHS

Details

Typical Turn-Off Delay Time

58 ns

Id - Continuous Drain Current

20 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

STB30

Current - Continuous Drain (Id) @ 25℃

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

STMicroelectronics

Power Dissipation (Max)

190W (Tc)

Product Status

活跃

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

系列

Automotive, AEC-Q101

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

功率耗散

190

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

180mOhm @ 10A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250µA

输入电容(Ciss)(Max)@Vds

1440 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

30.8 nC @ 10 V

上升时间

8 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±25V

产品类别

MOSFET

晶体管类型

1 N - Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET