SUMITOMO ELECTRIC Industries Ltd EGNB010MK
- 收藏
- 对比
EGNB010MK
2388-EGNB010MK
晶体管 - 特殊用途
--
大陆
立即发货

Description: RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL-CERAMIC PACKAGE-2
1最小包装量--
EGNB010MK详情
SUMITOMO ELECTRIC Industries Ltd EGNB010MK重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
2
晶体管元件材料
氮化镓
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SUMITOMO ELECTRIC INDUSTRIES LTD
Package Description
FLANGE MOUNT, R-CDFM-F2
Number of Elements
1
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
ECCN 代码
EAR99
端子位置
DUAL
终端形式
FLAT
Reach合规守则
unknown
引脚数量
2
JESD-30代码
R-CDFM-F2
资历状况
不合格
配置
SINGLE
操作模式
DEPLETION MODE
箱体转运
SOURCE
晶体管应用
AMPLIFIER
极性/通道类型
N-CHANNEL
DS 击穿电压-最小值
120 V
场效应管技术
高电子迁移率
最高频段
S带
EGNB010MK拓展信息
SUMITOMO ELECTRIC Device Innovations Inc
SUMITOMO ELECTRIC Device Innovations Inc
SUMITOMO ELECTRIC Device Innovations Inc
SUMITOMO ELECTRIC Industries Ltd
SUMITOMO ELECTRIC Device Innovations Inc
SUMITOMO ELECTRIC Industries Ltd
SUMITOMO ELECTRIC Industries Ltd
SUMITOMO ELECTRIC Device Innovations Inc
SUMITOMO ELECTRIC Industries Ltd
SUMITOMO ELECTRIC Industries Ltd







哦! 它是空的。