Taiwan Semiconductor BAV100 L1G

表面安装

YES

二极管元件材料

SILICON

终端数量

2

ECCN (US)

EAR99

Peak Reverse Repetitive Voltage (V)

250

Maximum Continuous Forward Current (A)

0.2

Peak Non-Repetitive Surge Current (A)

4

Peak Forward Voltage (V)

[email protected]

Peak Reverse Current (uA)

0.1@50V

Maximum Power Dissipation (mW)

500

Peak Reverse Recovery Time (ns)

50

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

200

Automotive

无

Supplier Package

Mini-MELF

Military

无

Mounting

表面贴装

Package Length

3.7(Max)

PCB changed

2

Package Description

O-LELF-R2

Package Style

长式

Package Body Material

GLASS

Operating Temperature-Min

-65 °C

Operating Temperature-Max

200 °C

Manufacturer Part Number

BAV100L1G

Power Dissipation (Max)

0.5 W

Package Shape

ROUND

Manufacturer

台湾半导体

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

TAIWAN SEMICONDUCTOR CO LTD

Risk Rank

5.69

包装

卷带

零件状态

Obsolete

ECCN 代码

EAR99

类型

小信号开关二极管

端子位置

END

终端形式

环绕

Reach合规守则

unknown

引脚数量

2

JESD-30代码

O-LELF-R2

配置

Single

二极管类型

接收电极

箱体转运

ISOLATED

输出电流-最大值

0.2 A

Rep Pk反向电压-最大值

250 V

反向恢复时间-最大值

0.05 µs

直径

1.6(Max)

RoHS状态

是,有豁免