Taiwan Semiconductor BC547B A1

生命周期状态

Production (Last Updated: 2 years ago)

安装类型

通孔

包装/外壳

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

供应商器件包装

TO-92

Connections

1/4 NPT

Case Size

4

Manufacturer Part Number

40-901-1000-psi

Case Style

Lower Mount

Range

0-1,000 psi

Manufacturer

NOSHOK

Emitter-Base Voltage

6(V)

Operating Temperature Classification

Military

Package Type

TO-92

Transistor Polarity

NPN

Collector-Base Voltage

50(V)

Category

双极小信号

Operating Temp Range

-65C to 150C

Collector Current (DC)

0.1(A)

Number of Elements

1

Rad Hardened

无

Collector-Emitter Voltage

45(V)

DC Current Gain

200

Mounting

通孔

Package

Tape & Box (TB)

Current-Collector (Ic) (Max)

100 mA

厂商

Taiwan Semiconductor Corporation

Product Status

Obsolete

Manufacturer Lifecycle Status

ACTIVE (Last Updated: 2 years ago)

RoHS

Compliant

Number of Elements per Chip

1

Dimensions

5.1 x 4.1 x 4.7mm

Maximum Operating Temperature

+150 °C

Maximum Collector Emitter Voltage

45 V

Maximum DC Collector Current

100 mA

Minimum DC Current Gain

200

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

500 mW

Collector-Emitter Saturation Voltage

-

Unit Weight

0.016000 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

通孔

Gain Bandwidth Product fT

-

Brand

台湾半导体

Collector- Emitter Voltage VCEO Max

45 V

包装

Box

操作温度

-65°C ~ 150°C (TJ)

系列

-

最高工作温度

150 °C

最小工作温度

-65 °C

子类别

Transistors

最大功率耗散

500 mW

技术

Si

频率

100(MHz)

引脚数量

3

极性

NPN

配置

Single

元素配置

Single

功率耗散

0.5(W)

输出功率

Not Required(W)

功率 - 最大

500 mW

产品类别

BJTs - Bipolar Transistors

晶体管类型

NPN

集电极发射器电压(VCEO)

45 V

最大集电极电流

200 mA

最小直流增益（hFE）@ Ic, Vce

200 @ 2mA, 5V

最大集极截止电流

15nA (ICBO)

不同 Ib, Ic 时 Vce 饱和度（最大值）

-

电压 - 集射极击穿（最大值）

45 V

频率转换

-

集电极基极电压(VCBO)

50 V

发射极基极电压 (VEBO)

6 V

产品类别

Bipolar Transistors - BJT