Taiwan Semiconductor BC817-16

包装/外壳

SOT-23-3

Manufacturer

TAIWAN SEMICONDUCTOR

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

300 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

100

Collector-Emitter Saturation Voltage

700 mV

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

100 MHz

Brand

台湾半导体

Maximum DC Collector Current

500 mA

DC Current Gain hFE Max

250

RoHS

Details

Collector- Emitter Voltage VCEO Max

45 V

包装

SOT-23

系列

BC817-xx

子类别

Transistors

技术

Si

配置

Single

电压

VCEO - 45V

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

50 V

连续集电极电流

500 mA

产品类别

Bipolar Transistors - BJT