Taiwan Semiconductor BC856B RF

包装/外壳

SOT-23-3

表面安装

YES

终端数量

3

晶体管元件材料

SILICON

Package

Bulk

Base Product Number

088900

厂商

Molex

Product Status

活跃

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

200 mW

Transistor Polarity

PNP

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

220

Collector-Emitter Saturation Voltage

650 mV

Unit Weight

0.050717 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

9000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

100 MHz

Part # Aliases

BC856B

Manufacturer

台湾半导体

Brand

台湾半导体

Maximum DC Collector Current

100 mA

DC Current Gain hFE Max

475

RoHS

Details

Collector- Emitter Voltage VCEO Max

65 V

Package Description

SMALL OUTLINE, R-PDSO-G3

Package Style

小概要

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

30

Rohs Code

有

Transition Frequency-Nom (fT)

100 MHz

Manufacturer Part Number

BC856BRF

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

TAIWAN SEMICONDUCTOR CO LTD

Risk Rank

5.56

系列

*

包装

切割胶带

JESD-609代码

e3

ECCN 代码

EAR99

端子表面处理

Matte Tin (Sn) - with Nickel (Ni) barrier

HTS代码

8541.21.00.95

子类别

Transistors

技术

Si

端子位置

DUAL

终端形式

鸥翼

峰值回流焊温度（摄氏度）

260

Reach合规守则

compliant

JESD-30代码

R-PDSO-G3

资历状况

不合格

配置

Single

极性/通道类型

PNP

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

80 V

集电极电流-最大值(IC)

0.1 A

最小直流增益（hFE）

220

连续集电极电流

- 0.1 A

集电极-发射器电压-最大值

65 V

产品类别

Bipolar Transistors - BJT