Taiwan Semiconductor GBL02 C2

包装/外壳

GBL-4

ECCN (US)

EAR99

Bridge Type

单相

Peak Reverse Repetitive Voltage (V)

200

Peak Average Forward Current (A)

4

Peak RMS Reverse Voltage (V)

140

Peak Non-Repetitive Forward Surge Current (A)

150

Peak Forward Voltage (V)

1.1

Peak Reverse Current (uA)

5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Standard Package Name

GBL型壳体

Supplier Package

GBL型壳体

Military

无

Mounting

通孔

Package Height

11.3(Max)

Package Length

20.3(Max)

Package Width

3.7(Max)

PCB changed

4

Peak Rep Rev Volt

200(V)

Operating Temperature Classification

Military

Avg. Forward Curr (Max)

4(A)

Package Type

GBL型壳体

Phase Type

单相

Rev Curr

5(mA)

Operating Temp Range

-55C to 150C

Number of Elements

1

RMS Voltage (Max)

140(V)

Peak Non-Repetitive Surge Current (Max)

150(A)

Rad Hardened

无

Vr - Reverse Voltage

140 V

Ir - Reverse Current

5 uA

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1200

Mounting Styles

通孔

Manufacturer

台湾半导体

Brand

台湾半导体

If - Forward Current

4 A

Peak Reverse Voltage

200 V

RoHS

Details

包装

Tube

零件状态

活跃

类型

单相电桥

子类别

Diodes & Rectifiers

引脚数量

4

配置

Single

最大浪涌电流

150 A

正向电压

1.1(V)

产品类别

桥式整流器

Vf-正向电压

1.1 V

产品类别

桥式整流器

宽度

3.7 mm

高度

11.3 mm

长度

20.3 mm

RoHS状态

是,有豁免