Taiwan Semiconductor SMBJ11CAHR4G

包装/外壳

DO-214AA-2

RoHS

Details

Breakdown Voltage / V

12.2 V

Pppm - Peak Pulse Power Dissipation

600 W

Vesd - Voltage ESD Contact

-

Vesd - Voltage ESD Air Gap

-

Cd - Diode Capacitance

-

Ipp - Peak Pulse Current

34 A

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Qualification

AEC-Q101

Pd - Power Dissipation

3 W

Factory Pack QuantityFactory Pack Quantity

3000

Unit Weight

0.003280 oz

系列

SMBJxx

包装

Reel

额定电流

1 uA

终端样式

SMD/SMT

工作电压

11 V

极性

双向

通道数量

1 Channel

箝位电压

18.2 V

Vf-正向电压

3.5 V