Taiwan Semiconductor TSM7N65CZ C0

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±30

Maximum Continuous Drain Current (A)

6.4

Maximum Drain Source Resistance (MOhm)

1200@10V

Typical Gate Charge @ Vgs (nC)

32@10V

Typical Gate Charge @ 10V (nC)

32

Typical Input Capacitance @ Vds (pF)

905@25V

Maximum Power Dissipation (mW)

125000

Typical Fall Time (ns)

19

Typical Rise Time (ns)

14

Typical Turn-Off Delay Time (ns)

47

Typical Turn-On Delay Time (ns)

14

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Width

4.83(Max)

Package Length

10.5(Max)

PCB changed

3

Tab

Tab

Standard Package Name

TO-220

Supplier Package

TO-220

包装

Tube

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N