Taiwan Semiconductor TSM9ND50CI C0G

包装/外壳

ITO-220-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

500 V

Id - Continuous Drain Current

9 A

Rds On - Drain-Source Resistance

900 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Qg - Gate Charge

24.5 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

50 W

Channel Mode

Enhancement

Fall Time

21 ns

Factory Pack QuantityFactory Pack Quantity

4000

Typical Turn-Off Delay Time

22 ns

Typical Turn-On Delay Time

8.6 ns

Part # Aliases

TSM9ND50CI

Unit Weight

0.211644 oz

系列

TSM

包装

Tube

配置

Single

通道数量

1 Channel

上升时间

19 ns

晶体管类型

Single N-Channel Power MOSFET