TE Connectivity CY6756-000

包装/外壳

TO-92-3

Emitter- Base Voltage VEBO

5 V

Pd - Power Dissipation

625 mW

Transistor Polarity

PNP

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

100

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

通孔

Gain Bandwidth Product fT

120 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

1 A

DC Current Gain hFE Max

250

RoHS

N

Collector- Emitter Voltage VCEO Max

60 V

系列

2N5823

包装

Bulk

最高工作温度

200 °C

最小工作温度

-65 °C

颜色

Yellow

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

导线/电缆直径

1.57 mm

集电极基极电压(VCBO)

70 V

连续集电极电流

750 mA

产品类别

Bipolar Transistors - BJT