TE Connectivity CY6790-000

包装/外壳

TO-18-3

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

500 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 200 C

DC Collector/Base Gain hfe Min

25 at 1 mA, 10 V

Collector-Emitter Saturation Voltage

500 mV

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

通孔

Gain Bandwidth Product fT

200 MHz

Manufacturer

Central Semiconductor

Brand

Central Semiconductor

Maximum DC Collector Current

-

DC Current Gain hFE Max

200 at 30 mA, 10 V

RoHS

N

Collector- Emitter Voltage VCEO Max

200 V

系列

2N6430

包装

Bulk

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

200 V

连续集电极电流

500 mA

产品类别

Bipolar Transistors - BJT