TE Connectivity D38999/26ZE6SA

包装/外壳

SC-70-6

触点镀层

Gold

底架

Cable

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

200 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

80

Collector-Emitter Saturation Voltage

200 mV

Unit Weight

0.000988 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

300 MHz

Manufacturer

onsemi

Brand

onsemi / Fairchild

Maximum DC Collector Current

200 mA

DC Current Gain hFE Max

250

RoHS

Details

Collector- Emitter Voltage VCEO Max

160 V

系列

FFB5551

包装

MouseReel

终端

Crimp

性别

Male

子类别

Transistors

技术

Si

方向

Straight

配置

Dual

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

180 V

连续集电极电流

200 mA

产品类别

Bipolar Transistors - BJT

宽度

1.25 mm

高度

1 mm

长度

2 mm