TE Connectivity V23542-C1052-Z110

包装/外壳

TO-220-3

Vds - Drain-Source Breakdown Voltage

500 V

Typical Turn-On Delay Time

20 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

125 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

24 nC

Tradename

UniFET

Rds On - Drain-Source Resistance

850 mOhms

RoHS

Details

Typical Turn-Off Delay Time

45 ns

Id - Continuous Drain Current

9 A

系列

FDPF10N50FT

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

40 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

4.9 mm

高度

16.07 mm

长度

10.36 mm