TE Connectivity YACT24MF32AN000000

包装/外壳

SOT-363-6

触点镀层

Gold

外壳材料

Composite

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

250 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

200

Collector-Emitter Saturation Voltage

200 mV

Unit Weight

0.000265 oz

Minimum Operating Temperature

- 65 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

250 MHz

Part # Aliases

BC846SH6727XT SP000746928 BC846SH6727XTSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Maximum DC Collector Current

200 mA

DC Current Gain hFE Max

450

RoHS

Details

Collector- Emitter Voltage VCEO Max

65 V

Shell Sizes

19

Shell Style#

Jam Nut

MIL Type

MIL-DTL-38999 III

Voltage, Rating

600 VAC, 850 VDC

Insert Arrangement

19-32

Contact Materials

Copper Alloy

系列

BC846

包装

MouseReel

定位的数量

32 Position

子类别

Transistors

技术

Si

触点性别

Pin (Male)

配置

Dual

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

80 V

外壳电镀

Nickel

连续集电极电流

100 mA

产品

Connectors

安装角

Straight

产品类别

Bipolar Transistors - BJT