TE Connectivity YACT24MG35JA-61490

包装/外壳

TO-247-3

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

20 ns

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

391 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

240

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

SP000745036 IPW65R8CFDXK IPW65R080CFDFKSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

167 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

72 mOhms

RoHS

Details

Typical Turn-Off Delay Time

85 ns

Id - Continuous Drain Current

43.3 A

系列

CoolMOS CFD2

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

18 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

5.21 mm

高度

21.1 mm

长度

16.13 mm