TE Connectivity YDTS20G21-35PNV001

包装/外壳

TO-220AB-3

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

13 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

170 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IRFB9N60APBF

Manufacturer

Vishay

Brand

Vishay / Siliconix

Qg - Gate Charge

49 nC

Rds On - Drain-Source Resistance

750 mOhms

RoHS

Details

Typical Turn-Off Delay Time

30 ns

Id - Continuous Drain Current

9.2 A

系列

IRFB

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

25 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET