TE Connectivity YDTS20G21-35SA6149

包装/外壳

SOT-363-6

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

0.15 us

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

1.56 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

SI1424EDH-T1-GE3

Manufacturer

Vishay

Brand

Vishay / Siliconix

Qg - Gate Charge

18 nC

Tradename

TrenchFET

Rds On - Drain-Source Resistance

33 mOhms

RoHS

Details

Typical Turn-Off Delay Time

3.8 us

Id - Continuous Drain Current

4 A

系列

SI1

包装

切割胶带

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

0.3 us

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET