TE Connectivity YDTS26G23-53SB6149

包装/外壳

SOT-363-6

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

125 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

1.6 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

SI1443EDH-T1-GE3

Manufacturer

Vishay

Brand

Vishay / Siliconix

Qg - Gate Charge

28 nC

Tradename

TrenchFET

Rds On - Drain-Source Resistance

43 mOhms

RoHS

Details

Typical Turn-Off Delay Time

1800 ns

Id - Continuous Drain Current

4 A

系列

SI1

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

220 ns

产品类别

MOSFET

晶体管类型

1 P-Channel

产品类别

MOSFET