Texas Instruments 1595412

包装/外壳

TO-220-3

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

8 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

45 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Forward Transconductance - Min

7 S

Id - Continuous Drain Current

13.6 A

Typical Turn-Off Delay Time

20 ns

RoHS

Details

Rds On - Drain-Source Resistance

110 mOhms

Tradename

QFET

Qg - Gate Charge

6.4 nC

Brand

onsemi / Fairchild

Manufacturer

onsemi

Part # Aliases

FQP13N06L_NL

Channel Mode

Enhancement

系列

FQP13N06L

包装

Tube

类型

MOSFET

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

90 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

4.7 mm

高度

16.3 mm

长度

10.67 mm