Texas Instruments LP8549B1ASPX07
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LP8549B1ASPX07详情
Texas Instruments LP8549B1ASPX07重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-363-6
Vds - Drain-Source Breakdown Voltage
60 V
Typical Turn-On Delay Time
20 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
200 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.000265 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
10000
Mounting Styles
SMD/SMT
Forward Transconductance - Min
100 ms
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
800 pC
Rds On - Drain-Source Resistance
3 Ohms
RoHS
Details
Typical Turn-Off Delay Time
40 ns
Id - Continuous Drain Current
115 mA
Package
Bulk
厂商
德州仪器
Product Status
活跃
包装
Reel
系列
*
子类别
MOSFETs
技术
Si
配置
Dual
通道数量
2 Channel
产品类别
MOSFET
晶体管类型
2 N-Channel
产品类别
MOSFET
LP8549B1ASPX07拓展信息








哦! 它是空的。