1SS226(F)详情
Toshiba 1SS226(F)重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
材料
Si
ECCN (US)
EAR99
Maximum DC Reverse Voltage (V)
80
Peak Reverse Repetitive Voltage (V)
85
Maximum Continuous Forward Current (A)
0.1
Peak Non-Repetitive Surge Current (A)
2
Peak Forward Voltage (V)
1.2
Peak Reverse Current (uA)
0.5
Maximum Diode Capacitance (pF)
3
Maximum Power Dissipation (mW)
150
Peak Reverse Recovery Time (ns)
4
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
125
Supplier Temperature Grade
汽车
Automotive
有
AEC Qualified Number
AEC-Q101
Standard Package Name
S-MINI
Supplier Package
S-Mini
Military
无
Mounting
表面贴装
Package Height
1.1
Package Length
2.9
Package Width
1.5
PCB changed
3
Lead Shape
Gull-wing
Number of Elements per Chip
2
Dimensions
1.1 x 2.9 x 1.5mm
Package Type
SOT-346 (SC-59)
Maximum Operating Temperature
+125 °C
Minimum Operating Temperature
-55 °C
零件状态
Obsolete
类型
开关二极管
引脚数量
3
配置
双系列
二极管配置
Series
宽度
1.5mm
高度
1.1mm
长度
2.9mm
RoHS状态
符合RoHS标准
1SS226(F)拓展信息
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba Semiconductor and Storage
Toshiba
Toshiba
Toshiba









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