1SS416,L3M(T详情
Toshiba 1SS416,L3M(T重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
底架
表面贴装
材料
Si
ECCN (US)
EAR99
Maximum DC Reverse Voltage (V)
30
Peak Reverse Repetitive Voltage (V)
35
Maximum Continuous Forward Current (A)
0.1
Peak Non-Repetitive Surge Current (A)
1
Peak Forward Voltage (V)
0.5
Peak Reverse Current (uA)
50
Maximum Diode Capacitance (pF)
15(Typ)
Maximum Power Dissipation (mW)
100
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
100
Supplier Package
SOD-923
Military
无
Mounting
表面贴装
Package Height
0.4
Package Length
0.8
Package Width
0.6
PCB changed
2
Peak Rep Rev Volt
35(V)
Peak Forward Voltage
0.5(V)
Operating Temperature Classification
Industrial
Package Type
SOD-923
Product Depth (mm)
0.6(mm)
Maximum Forward Current
100(mA)
Operating Temp Range
-40C to 100C
Power Dissipation (Max)
100(mW)
Rad Hardened
无
RoHS
Compliant
Manufacturer Part Number
1SS416,L3M(T
Manufacturer
东芝美国电子元器件
Part Life Cycle Code
活跃
Ihs Manufacturer
TOSHIBA CORP
Risk Rank
1.49
包装
卷带
零件状态
活跃
ECCN 代码
EAR99
类型
小信号肖特基二极管
Reach合规守则
unknown
引脚数量
2
配置
Single
二极管类型
接收电极
最大反向电压(DC)
30 V
平均整流电流
100 mA
峰值反向电流
50(uA)
峰值非恢复性浪涌电流
1(A)
RoHS状态
符合RoHS标准
1SS416,L3M(T拓展信息
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba Semiconductor and Storage
Toshiba
Toshiba
Toshiba









哦! 它是空的。