Toshiba 2SK241-GR

表面安装

NO

材料

Si

终端数量

3

晶体管元件材料

SILICON

ECCN (US)

EAR99

Channel Mode

Depletion

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

20

Maximum Gate Source Voltage (V)

±5

Maximum Continuous Drain Current (A)

0.03

Maximum Gate Source Leakage Current (nA)

50

Maximum IDSS (uA)

14000

Typical Input Capacitance @ Vds (pF)

3@10V

Typical Reverse Transfer Capacitance @ Vds (pF)

0.035@10V

Typical Forward Transconductance (S)

0.01

Maximum Power Dissipation (mW)

200

Typical Power Gain (dB)

28

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

125

Supplier Package

2-4E1D

Military

无

Mounting

通孔

Package Height

3.2(Max)

Package Length

4.2(Max)

Package Width

2.6(Max)

PCB changed

3

Package Description

IN-LINE, R-PSIP-T3

Package Style

IN-LINE

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Max

125 °C

Manufacturer Part Number

2SK241-GR

Package Shape

RECTANGULAR

Manufacturer

东芝美国电子元器件

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

TOSHIBA CORP

Risk Rank

5.69

Drain Current-Max (ID)

0.03 A

JESD-609代码

e0

零件状态

Obsolete

ECCN 代码

EAR99

端子表面处理

锡铅

HTS代码

8541.21.00.95

子类别

FET 通用电源

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

unknown

引脚数量

3

JESD-30代码

R-PSIP-T3

资历状况

不合格

配置

Single

操作模式

DEPLETION MODE

晶体管应用

AMPLIFIER

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

0.03 A

DS 击穿电压-最小值

20 V

信道型

N

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

0.2 W

反馈上限-最大值 (Crss)

0.05 pF

最高频段

甚高频段

RoHS状态

RoHS non-compliant