Toshiba 3SK291(TE85R,F)

材料

Si

ECCN (US)

EAR99

Channel Mode

Depletion

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

12.5

Maximum Gate Source Voltage (V)

±8

Maximum Continuous Drain Current (A)

0.03

Typical Input Capacitance @ Vds (pF)

2@6V

Typical Reverse Transfer Capacitance @ Vds (pF)

16@6V

Typical Forward Transconductance (S)

0.026

Maximum Power Dissipation (mW)

150

Typical Power Gain (dB)

22.5

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

125

Automotive

无

Supplier Package

SMQ

Military

无

Mounting

表面贴装

Package Height

1.1

Package Length

2.9

Package Width

1.5

PCB changed

4

包装

卷带

零件状态

活跃

引脚数量

4

配置

单双闸门

信道型

N

RoHS状态

符合RoHS标准