CBS10S30,L3F(A详情
Toshiba CBS10S30,L3F(A重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
材料
Si
ECCN (US)
EAR99
Maximum DC Reverse Voltage (V)
20
Peak Reverse Repetitive Voltage (V)
30
Maximum Continuous Forward Current (A)
1
Peak Non-Repetitive Surge Current (A)
3
Peak Forward Voltage (V)
0.45
Peak Reverse Current (uA)
500
Maximum Diode Capacitance (pF)
135(Typ)
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
125
Automotive
无
Supplier Package
CST-B
Military
无
Mounting
表面贴装
Package Height
0.38
Package Length
1.2
Package Width
0.8
PCB changed
2
Peak Rep Rev Volt
30(V)
Peak Forward Voltage
0.45(V)
Operating Temperature Classification
Military
Package Type
CST-B
Product Depth (mm)
0.8(mm)
Maximum Forward Current
1000(mA)
Rev Curr
500(uA)
Operating Temp Range
-55C to 125C
Rad Hardened
无
Rectifier Type
肖特基二极管
类型
小信号肖特基二极管
引脚数量
2
配置
Single
正向电流
1000(mA)
正向电压
0.45(V)
峰值反向电流
500(uA)
峰值非恢复性浪涌电流
3(A)
RoHS状态
符合RoHS标准
CBS10S30,L3F(A拓展信息
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba Semiconductor and Storage
Toshiba
Toshiba









哦! 它是空的。