Toshiba TK13A65D,S5Q(J)

材料

Si

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

pi-MOS VII

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

650

Maximum Gate Source Voltage (V)

±30

Maximum Gate Threshold Voltage (V)

4

Maximum Continuous Drain Current (A)

13

Maximum Gate Source Leakage Current (nA)

1000

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

470@10V

Typical Gate Charge @ Vgs (nC)

45@10V

Typical Gate Charge @ 10V (nC)

45

Typical Input Capacitance @ Vds (pF)

2600@25V

Maximum Power Dissipation (mW)

50000

Typical Fall Time (ns)

25

Typical Rise Time (ns)

50

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

通孔

Package Height

15

Package Width

4.5

Package Length

10

PCB changed

3

Tab

Tab

Supplier Package

TO-220SIS

Continuous Drain Current

13(A)

Drain-Source On-Volt

650(V)

Operating Temperature Classification

Military

Package Type

TO-220SIS

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±30(V)

Number of Elements

1

Rad Hardened

无

包装

Tube

类型

功率MOSFET

引脚数量

3

极性

N

配置

Single

功率耗散

50(W)

信道型

N