Toshiba TK14V65W,LQ

包装/外壳

DFN8x8-5

安装类型

表面贴装

供应商器件包装

4-DFN-EP (8x8)

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

60 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

139 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.006173 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Toshiba

Brand

Toshiba

Qg - Gate Charge

35 nC

Tradename

DTMOSIV

Rds On - Drain-Source Resistance

280 mOhms

RoHS

Details

Typical Turn-Off Delay Time

110 ns

Id - Continuous Drain Current

13.7 A

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

13.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

东芝半导体与存储

Power Dissipation (Max)

139W (Tc)

Product Status

活跃

系列

TK14V65W

包装

MouseReel

操作温度

150°C

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

280mOhm @ 6.9A, 10V

不同 Id 时 Vgs(th)（最大值）

3.5V @ 690µA

输入电容(Ciss)(Max)@Vds

1300 pF @ 300 V

门极电荷(Qg)(最大)@Vgs

35 nC @ 10 V

上升时间

20 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET