Toshiba TK8A25DAS4X

包装/外壳

TO-220-3

安装类型

通孔

供应商器件包装

TO-220SIS

Vds - Drain-Source Breakdown Voltage

250 V

Typical Turn-On Delay Time

32 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

30 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Toshiba

Brand

Toshiba

Qg - Gate Charge

16 nC

Tradename

MOSVII

Rds On - Drain-Source Resistance

500 mOhms

RoHS

Details

Typical Turn-Off Delay Time

66 ns

Id - Continuous Drain Current

7.5 A

Package

Tube

Current - Continuous Drain (Id) @ 25℃

7.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

东芝半导体与存储

Power Dissipation (Max)

30W (Tc)

Product Status

活跃

系列

TK8A25DA

包装

Tube

操作温度

150°C

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

500mOhm @ 3.8A, 10V

不同 Id 时 Vgs(th)（最大值）

3.5V @ 1mA

输入电容(Ciss)(Max)@Vds

550 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

16 nC @ 10 V

上升时间

28 ns

漏源电压 (Vdss)

250 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET