TLP291(GR,SE(T详情
Toshiba TLP291(GR,SE(T重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
引脚数
4
Collector-Emitter Voltage
80(V)
Package Type
SO
Output Device
Transistor
Number of Elements
1
Collector Current (DC)
0.05(A)
Mounting
表面贴装
Rad Hardened
无
Operating Temp Range
-55C to 110C
Operating Temperature Classification
Industrial
Collector-Emitter Saturation Voltage
0.3(V)
Maximum Forward Current
50(mA)
Special Features
Suitable for High-Density Surface Mounting Applications Such as Small Switching Power Supplies And Programmable Controllers, TLP291 Consists of Photo Transistor Optically Coupled to a Gallium Arsenide Infrared Emitting Diode
包装
卷带
系列
TLP 291
引脚数量
4
输出类型
DC
通道数量
1
功率耗散
0.2(W)
输入类型
DC
正向电流
50(mA)
正向电压
1.4(V)
反向击穿电压
5(V)
隔离电压
3750(V)
电流传输比
100(%)
TLP291(GR,SE(T拓展信息
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage









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