Toshiba TPCA8053HT2L1VM

材料

Si

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

U-MOS VI-H

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

60

Maximum Gate Source Voltage (V)

±20

Maximum Gate Threshold Voltage (V)

2.3

Maximum Continuous Drain Current (A)

15

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

10

Maximum Drain Source Resistance (MOhm)

22.3@10V

Typical Gate Charge @ Vgs (nC)

25@10V|13@5V

Typical Gate Charge @ 10V (nC)

25

Typical Input Capacitance @ Vds (pF)

1620@10V

Maximum Power Dissipation (mW)

2800

Typical Fall Time (ns)

7

Typical Rise Time (ns)

2.4

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Mounting

表面贴装

Package Height

0.95

Package Width

5

Package Length

5

PCB changed

8

Standard Package Name

SOP

Supplier Package

SOP预付款

包装

卷带

零件状态

Obsolete

引脚数量

8

配置

单四漏三源

信道型

N