Toshiba TPCP8011,LF

包装/外壳

PS-8

安装类型

表面贴装

供应商器件包装

PS-8

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Qualification

AEC-Q101

Pd - Power Dissipation

1.96 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000600 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Toshiba

Brand

Toshiba

Qg - Gate Charge

11.8 nC

Tradename

U-MOSIV

Rds On - Drain-Source Resistance

31.8 mOhms

RoHS

Details

Typical Turn-Off Delay Time

17.4 ns

Id - Continuous Drain Current

5 A

Package

Tape & Reel (TR)

Current - Continuous Drain (Id) @ 25℃

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

厂商

东芝半导体与存储

Power Dissipation (Max)

940mW (Ta)

Product Status

活跃

系列

TPCP8011

包装

MouseReel

操作温度

175°C

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

51.2mOhm @ 2.5A, 10V

不同 Id 时 Vgs(th)（最大值）

3V @ 1mA

输入电容(Ciss)(Max)@Vds

505 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

11.8 nC @ 10 V

上升时间

5.37 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET