Toshiba America Electronic Components GT60M103
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GT60M103
2541-GT60M103
晶体管 - IGBT - 单个
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大陆
立即发货

TRANSISTOR 60 A, 900 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
1最小包装量--
GT60M103详情
Toshiba America Electronic Components GT60M103重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
晶体管元件材料
SILICON
Part Life Cycle Code
Obsolete
Ihs Manufacturer
TOSHIBA CORP
Number of Elements
1
Reach合规守则
unknown
资历状况
不合格
配置
SINGLE
极性/通道类型
N-CHANNEL
集电极电流-最大值(IC)
60 A
集电极-发射器电压-最大值
900 V
GT60M103拓展信息
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba America Electronic Components
Toshiba America Electronic Components
Toshiba America Electronic Components
Toshiba America Electronic Components
Toshiba America Electronic Components
Toshiba America Electronic Components
Toshiba America Electronic Components







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