Toshiba Semiconductor and Storage TPCP8407,LF

安装类型

表面贴装

包装/外壳

8-SMD, Flat Lead

供应商器件包装

PS-8

厂商

东芝半导体与存储

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

5A (Ta), 4A (Ta)

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

12 ns, 25 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Qualification

AEC-Q101

Pd - Power Dissipation

1.77 W

Transistor Polarity

N-Channel, P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000600 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Toshiba

Brand

Toshiba

Qg - Gate Charge

11.8 nC, 18 nC

Tradename

U-MOSIV / U-MOSVI

Rds On - Drain-Source Resistance

62.8 mOhms, 82.2 mOhms

RoHS

Details

Typical Turn-Off Delay Time

17 ns, 126 ns

Id - Continuous Drain Current

5 A

系列

Automotive, AEC-Q101

操作温度

150°C

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Dual

通道数量

1 Channel

功率 - 最大

690mW (Ta)

场效应管类型

N and P-Channel

Rds On(Max)@Id,Vgs

36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V

不同 Id 时 Vgs(th)（最大值）

3V @ 1mA

输入电容(Ciss)(Max)@Vds

505pF @ 10V, 810pF @ 10V

门极电荷(Qg)(最大)@Vgs

11.8nC @ 10V, 18nC @ 10V

上升时间

5 ns, 8 ns

漏源电压 (Vdss)

40V

产品类别

MOSFET

晶体管类型

1 N-Channel, 1 P-Channel

场效应管特性

Standard

产品类别

MOSFET