TT Electronics VP1008CSM4

包装/外壳

LCC-3

Vds - Drain-Source Breakdown Voltage

100 V

Pd - Power Dissipation

400 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Rds On - Drain-Source Resistance

5 Ohms

Id - Continuous Drain Current

300 mA

技术

Si

通道数量

1 Channel