Viking Tech CS02FTGWR500

包装/外壳

D3PAK-3

Vds - Drain-Source Breakdown Voltage

300 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

403 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.218699 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

微芯片技术

Qg - Gate Charge

64 nC

Rds On - Drain-Source Resistance

61 mOhms

RoHS

Details

Id - Continuous Drain Current

54 A

包装

Tube

温度系数

300 ppm/°C

电阻

500 mΩ

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

产品类别

MOSFET

产品类别

MOSFET