A3012861-1 REVBH详情
Vishay A3012861-1 REVBH重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
DPAK-3
Vds - Drain-Source Breakdown Voltage
80 V
Typical Turn-On Delay Time
20 ns
Vgs th - Gate-Source Threshold Voltage
2 V
Qualification
AEC-Q101
Pd - Power Dissipation
227 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.011640 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2500
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
onsemi
Brand
onsemi / Fairchild
Qg - Gate Charge
88 nC
Rds On - Drain-Source Resistance
3.3 mOhms
RoHS
Details
Typical Turn-Off Delay Time
36 ns
Id - Continuous Drain Current
100 A
系列
FDD86367
包装
MouseReel
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
49 ns
产品类别
MOSFET
晶体管类型
1 N-Channel
产品类别
MOSFET
A3012861-1 REVBH拓展信息








哦! 它是空的。